Comparing standard IGBT and silicon carbide (SiC) Variable Speed Drives in pump systems
As part of a Swiss research project, a motor system using silicon carbide (SiC) MOSFET-based Variable Speed Drive was evaluated against a conventional system with insulated-gate bipolar transistor (IGBT) technology. Energy loss measurements from both systems were used to estimate the potential savings if all speed-controlled pump drive systems worldwide were converted to SiC technology. The results point to a global annual savings potential of 17 – 25 TWh.